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Updated: May 21, 2026

10:40
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Damar Yoga Kusuma1, Pooi See Lee
1School of Material Science and Engineering, Nanyang technological University, Block N4.1, Nanyang Avenue, 639798, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|May 30, 2012
Abstract
No abstract available in PubMed .
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