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Updated: May 21, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Critical wavefunctions in disordered graphene
J E Barrios-Vargas1, Gerardo G Naumis
1Departamento de Física-Química, Instituto de Física, Universidad Nacional Autónoma de México (UNAM). Apartado Postal 20-364, 01000, México DF, Mexico.
Abstract:
In order to elucidate the presence of non-localized states in doped graphene, a scaling analysis of the wavefunction moments, known as inverse participation ratios, is performed. The model used is a tight-binding Hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wavefunctions that follow a critical (power-law) decay, which show a behavior intermediate between those of metals and insulators. The power-law exponent distribution is robust against the inclusion of next-nearest neighbors and growing the system size.
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