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Published on: December 2, 2013
Enhancement of ultrafast nonlinear optical response of silicon nanocrystals by boron-doping
Kenji Imakita1, Masahiko Ito, Ryo Naruiwa
1Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe, 657-8501, Japan. imakita@eedept.kobe‐u.ac.jp
Abstract:
Nonlinear optical responses of boron (B)-doped silicon nanocrystals (Si-ncs) embedded in borosilicate glass were studied by z-scan and optical Kerr gate methods under femtosecond excitation at 780 nm. The nonlinear refractive index (n(2)) and the two photon absorption coefficients (β) of B-doped Si-ncs were found to be 3 times enhanced, compared to those of intrinsic Si-ncs. The response time was faster than 100 fs even at 5 K. The origin of the large nonlinear optical response was discussed, based on the experimental data of n(2), electron spin resonance spectra, and linear absorption spectra.

