A pattern recognition technique for the analysis of grain boundary structure by HREM

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

S Paciornik1, R Kilaas, J Turner

  • 1National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA.

Ultramicroscopy
|June 7, 2012
PubMed

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