Related Experiment Video
Updated: May 21, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer
Hsiao-Wen Zan1, Chun-Cheng Yeh, Hsin-Fei Meng
1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan. hsiaowen@mail.nctu.edu.tw
Abstract:
An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
