Related Experiment Video
Updated: May 21, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Abstract:
In this work, a high-power and broadband quantum dot superluminescent diode (QD-SLD) is achieved by using a two-section structure. The QD-SLD device consists of a tapered titled ridge waveguide section supplying for high optical gain and a straight titled ridge waveguide section to tune optical feedback from the rear facet of the device. The key point of our design is to achieve the wavelength-selective optical feedback to the emission of the QDs' ground state (GS) and 1st excited state (ES) by tuning the current densities injected in the straight titled section. With GS-dominant optical feedback under proper current-injection of the straight titled region, a high output power of 338 mW and a broad bandwidth of 65 nm is obtained simultaneously by the contribution associated to the QDs' GS and 1st ES emission.
