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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: May 21, 2026

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

Open foundry platform for high-performance electronic-photonic integration.

Jason S Orcutt1, Benjamin Moss, Chen Sun

  • 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, Massachusetts 02139, USA.

Optics Express
|June 21, 2012
PubMed
Summary
This summary is machine-generated.

This study demonstrates high-performance photonic devices integrated with electronics on a silicon-on-insulator (SOI) CMOS platform. This integration enables faster optical modulators and filter banks without compromising transistor speed.

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High Throughput Microfluidic Rapid and Low Cost Prototyping Packaging Methods
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High Throughput Microfluidic Rapid and Low Cost Prototyping Packaging Methods

Published on: December 23, 2013

Related Experiment Videos

Last Updated: May 21, 2026

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

High Throughput Microfluidic Rapid and Low Cost Prototyping Packaging Methods
07:51

High Throughput Microfluidic Rapid and Low Cost Prototyping Packaging Methods

Published on: December 23, 2013

Area of Science:

  • Photonics
  • Integrated Circuits
  • Semiconductor Manufacturing

Background:

  • Silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology is a mature platform for electronic devices.
  • Integrating photonic devices with electronics on a single chip offers potential for high-speed communication and computation.

Purpose of the Study:

  • To present novel photonic devices fabricated within an existing commercial SOI-CMOS foundry process.
  • To demonstrate monolithic integration of photonic devices with transistors without performance degradation.
  • To enable a widely available platform for high-performance photonic-electronic integrated circuits (PICs).

Main Methods:

  • Fabrication of photonic devices, including waveguides with 3 dB/cm loss, using a commercial 45 nm SOI-CMOS process.
  • Monolithic integration of photonic devices with transistors in the same fabrication layer.
  • Design and demonstration of an 8-channel optical microring-resonator filter bank and optical modulators controlled by integrated digital circuits.

Main Results:

  • Achieved 3 dB/cm waveguide loss in photonic devices.
  • Demonstrated monolithic integration with transistors, achieving a 4 ps logic stage delay.
  • Transistor performance remained unaffected by the integration of photonic components.
  • Successfully demonstrated an 8-channel optical filter bank and optical modulators controlled by digital circuits.

Conclusions:

  • The developed device design methodology requires no changes to existing fabrication infrastructure.
  • This approach enables a readily accessible platform for high-performance PICs.
  • The integration of photonics and electronics on a commercial CMOS platform is feasible and offers significant advantages.