Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bus Impedance Matrix01:24

Bus Impedance Matrix

Calculating subtransient fault currents for three-phase faults in an N-bus power system involves using the positive-sequence network. When a three-phase short circuit occurs at a specific bus, the analysis uses the superposition method to evaluate two separate circuits.
In the first circuit, all machine voltage sources are short-circuited, leaving only the prefault voltage source at the fault location. The positive-sequence bus impedance matrix can be determined by solving the nodal equations,...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Protein language models for structural biology.

Nature computational science·2026
Same author

Editorial overview: Artificial intelligence methodologies in structural biology: From static snapshots to dynamic and interaction landscapes.

Current opinion in structural biology·2026
Same author

Chip-scale high spectral purity micro-ring photon-pair source based on dual-pulse control.

Optics express·2026
Same author

mTM-align2: A Server for Real-time Protein Structure Database Search and Alignment.

Genomics, proteomics & bioinformatics·2026
Same author

Predictive Value of Circulating Tumor Cells in Neoadjuvant Chemoimmunotherapy for Non-Small Cell Lung Cancer.

Thoracic cancer·2026
Same author

The trRosettaRNA server for RNA structure prediction.

Nature protocols·2026

Related Experiment Video

Updated: May 21, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

A 2 × 2 nonblocking Mach-Zehnder-based silicon switch matrix.

Weiwei Chen1, Wanjun Wang, Weifeng Guo

  • 1Department of Information Science and Electronics Engineering and Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China.

Optics Express
|June 21, 2012
PubMed
Summary

This study presents a silicon-on-insulator Mach-Zehnder interferometer switch matrix. It achieves fast 17.4 ns switching speeds and low crosstalk for optical networks.

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Silicon Microchips for Manipulating Cell-cell Interaction
23:21

Silicon Microchips for Manipulating Cell-cell Interaction

Published on: August 30, 2007

Related Experiment Videos

Last Updated: May 21, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Silicon Microchips for Manipulating Cell-cell Interaction
23:21

Silicon Microchips for Manipulating Cell-cell Interaction

Published on: August 30, 2007

Area of Science:

  • Photonics
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Mach-Zehnder (MZ) interferometers are key components in photonic integrated circuits.
  • Silicon-on-insulator (SOI) technology offers a robust platform for fabricating optical devices.
  • Efficient optical switching is crucial for high-speed data communication networks.

Purpose of the Study:

  • To design and fabricate a 2x2 non-blocking switch matrix using Mach-Zehnder interferometers on an SOI platform.
  • To evaluate the performance characteristics of the fabricated switch matrix, including switching speed, crosstalk, and power consumption.

Main Methods:

  • The switch matrix was designed and fabricated using a 0.8-μm standard commercial CMOS foundry on an SOI wafer.
  • Each Mach-Zehnder switching element utilized paired multimode-imaging (MMI) couplers as power splitters and combiners.
  • Electrical driving was employed for device operation and performance testing.

Main Results:

  • The fabricated 2x2 switch matrix demonstrated electrical switching with a speed of 17.4 ns.
  • Crosstalk levels were measured to be below -16.1 dB across a 35 nm spectral bandwidth.
  • The total switching power consumption ranged from 4.55 mW to 22.4 mW depending on the switching path.

Conclusions:

  • The developed Mach-Zehnder interferometer-based switch matrix on SOI is a viable solution for high-speed optical switching.
  • The device exhibits competitive switching speeds and low crosstalk, suitable for integrated photonic applications.
  • Further optimization could potentially reduce power consumption for broader network integration.