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Semiconductors01:22

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Published on: December 2, 2013

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based

Hui Yu1, Marianna Pantouvaki, Joris Van Campenhout

  • 1Photonics Research Group, Department of Information Technology, Ghent University-imec, Center for Nano- and Biophotonics (NB Photonics), St.-Pietersnieuwstraat 41,9000 Gent, Belgium. hyu@intec.ugent.be

Optics Express
|June 21, 2012
PubMed
Summary

Interdigitated PN junctions in silicon modulators offer superior performance over lateral junctions, achieving a low VπLπ of 0.62 V∙cm. This enables high-speed data modulation, demonstrating 10 Gbit/s and 40 Gbit/s capabilities.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon modulators are crucial for optical communication.
  • Carrier-depletion modulators utilize PN junctions for modulation.
  • Comparing lateral and interdigitated PN junction designs is essential for optimizing performance.

Purpose of the Study:

  • To systematically compare lateral and interdigitated PN junction silicon modulators.
  • To identify the superior junction design for low VπLπ and high-speed modulation.
  • To demonstrate the practical application of optimized modulators in high-data-rate systems.

Main Methods:

  • Fabrication of silicon modulators with both lateral and interdigitated PN junctions on a unified platform.
  • Characterization of device performance, including VπLπ, propagation loss, and extinction ratio.
  • High-speed modulation testing at 10 Gbit/s and 40 Gbit/s.

Main Results:

  • The interdigitated PN junction achieved a significantly lower VπLπ (0.62 V∙cm) compared to the lateral junction.
  • Comparable propagation losses were observed between the two designs.
  • The interdigitated junction enabled 10 Gbit/s modulation (500 µm device) with a 7.5 dB extinction ratio.
  • A lateral junction device with a traveling wave electrode achieved 40 Gbit/s modulation (3 mm device).

Conclusions:

  • Interdigitated PN junctions are advantageous for achieving low VπLπ in silicon modulators.
  • The interdigitated design facilitates high-speed modulation with acceptable performance trade-offs (higher capacitance).
  • Optimized silicon modulator designs, including traveling wave electrodes, are capable of supporting multi-gigabit data rates.