Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

We investigate the effects of reduced exciton diffusion on the emission properties in InGaN/GaN multiple-quantum-well nanorods. Time-resolved photoluminescence spectra are recorded and compared in dry-etched InGaN/GaN nanorods and parent multiple quantum wells at various temperatures with carrier density in different regimes. Faster carrier recombination and absence of delayed rise in the emission dynamics are found in nanorods. Many effects, including surface damages and partial relaxation of the strain, may cause the faster recombination in nanorods. Together with these enhanced carrier recombination processes, the reduced exciton diffusion may induce the different temperature-dependent emission dynamics characterized by the delayed rise in time-resolved photoluminescence spectra.