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Electrical properties and behaviors of cuprous oxide cubes under high pressure
Cai-Long Liu1, Yong-Ming Sui, Wan-Bin Ren
1State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
Abstract:
An accurate in situ electrical resistivity measurement of cuprous oxide cubes has been conducted in a diamond anvil cell at room temperature with pressures up to 25 GPa. The abnormal electrical resistivity variation found at 0.7-2.2 GPa is attributed to the phase transformation from a cubic to a tetragonal structure. Three other discontinuous changes in the electrical resistivity are observed around 8.5, 10.3, and 21.6 GPa, corresponding to the phase transitions from tetragonal to pseudocubic to hexagonal to another hexagonal phase, respectively. The first-principles calculations illustrate that the electrical resistivity decrease of the tetragonal phase is not related to band-gap shrinkage but related to a higher quantity of electrons excited from strain-induced states increasing in band gap with increasing pressure. The results indicate that the Cu(2)O cubes begin to crush at about 15 GPa and completely transform into nanocrystalline at 25 GPa.
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