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Fully conductively cooled, diode-pumped Ho:Tm:LuLiF4 laser oscillator/amplifier
Yingxin Bai1, Jirong Yu, Mulugeta Petros
1Science Systems and Applications, Inc., One Enterprise Parkway, Hampton, Virginia, USA. yingxin.bai‑1@nasa.gov
Optics Letters
|June 30, 2012
Summary
This study presents a diode-pumped laser generating over 1 J pulses, with an amplifier achieving a gain exceeding 22.5. Researchers improved amplified spontaneous emission thresholds using specific laser crystal treatments.
Area of Science:
- Laser Physics
- Materials Science
Background:
- Diode-pumped solid-state lasers are crucial for various applications.
- Efficient cooling is essential for high-power laser performance.
Purpose of the Study:
- To develop a conductively cooled Ho:Tm:LuLiF laser oscillator and amplifier.
- To investigate amplified spontaneous emission (ASE) thresholds and gain characteristics.
Main Methods:
- Utilized a fully conductively cooled, diode-pumped linear Ho:Tm:LuLiF laser.
- Employed heat pipes for cooling pump diodes and the laser crystal.
- Investigated ASE thresholds with side-polished and fine-ground laser crystals.
Main Results:
- Generated >1 J normal mode pulses at 10 Hz.
- Achieved amplification of 80 mJ pulses to 400 mJ before ASE.
- Demonstrated a double-pass gain exceeding 22.5 with a 5 mJ input pulse.
- Increased ASE threshold to >8 J by fine-grinding the crystal surface, albeit with reduced efficiency.
Conclusions:
- The Ho:Tm:LuLiF laser system demonstrates high energy output and amplification capabilities.
- Laser crystal surface treatment significantly impacts ASE thresholds and overall efficiency.
- This work advances high-energy pulsed laser development.
