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Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.
V E Kisel1, K N Gorbachenya, A S Yasukevich
1Center for Optical Materials and Technologies, Belarusian National Technical University, 65 Nezavisimosti Avenue, Building 17, Minsk, Belarus. VEKisel@bntu.by
Optics Letters
|June 30, 2012
Summary
Researchers developed a novel diode-pumped microchip laser using Er, Yb:YAl(3)(BO(3))(4). This laser achieved 800 mW continuous wave output and 315 mW Q-switched output, demonstrating its potential for various applications.
Area of Science:
- Optics and Photonics
- Laser Physics
- Materials Science
Background:
- Microchip lasers offer compact and efficient laser sources.
- Erbium (Er) and Ytterbium (Yb) co-doped materials are crucial for infrared laser applications.
- Passively Q-switched lasers provide high peak power pulses.
Purpose of the Study:
- To report the first diode-pumped continuous wave (cw) and passively Q-switched microchip laser utilizing Er, Yb:YAl(3)(BO(3))(4) crystal.
- To characterize the laser performance in both cw and Q-switched regimes.
- To investigate the potential of Co(2+):MgAl(2)O(4) as a saturable absorber for this laser system.
Main Methods:
- Diode-pumping of an Er, Yb:YAl(3)(BO(3))(4) microchip laser.
- Operation in continuous wave (cw) and passively Q-switched modes.
- Utilized Cobalt-doped Magnesium Aluminate Spinel (Co(2+):MgAl(2)O(4)) as a saturable absorber.
Main Results:
- Achieved a maximum output power of 800 mW at 1602 nm in the cw regime with 7.7 W absorbed pump power.
- Demonstrated a TEM(00)-mode Q-switched average output power of 315 mW at 1522 nm.
- Q-switched pulses had a duration of 5 ns and pulse energy of 5.25 μJ at a 60 kHz repetition rate.
Conclusions:
- Successfully demonstrated a diode-pumped microchip laser based on Er, Yb:YAl(3)(BO(3))(4).
- The laser exhibits promising performance in both cw and Q-switched operation.
- The system shows potential for applications requiring compact, high-performance infrared laser sources.
