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Updated: May 20, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Note: ε(T) dependence behavior in GaP diodes at high temperatures
V A Krasnov1, S V Shutov, S Yu Yerochin
1V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, 76∕78 Zavodskaya St., 73008 Kherson, Ukraine.
Abstract:
Temperature behavior of static dielectric constant ε in a base area of GaP diode has been studied by processing its capacity-voltage characteristics in the temperature range 300-575 K. The ε(T) function has been determined to be a monotonic function of temperature with a maximum in high temperature region. The temperature behavior of ε could be explained by the effect of mixed electron-ion mechanism of polarization in wide bandgap III-V semiconductor compounds. Temperature dependences ε(T) and Δε(T) obtained within this work would be useful for developers of high-temperature electronics and thermometry.
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