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Updated: May 20, 2026

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Towards a quantum representation of the ampere using single electron pumps
S P Giblin1, M Kataoka, J D Fletcher
1National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, UK. stephen.giblin@npl.co.uk
Nature Communications
|July 5, 2012
Summary
Researchers developed a highly accurate semiconductor quantum dot electron pump. This device achieves unprecedented precision, paving the way for a new quantum current standard and the redefinition of the SI ampere.
Area of Science:
- Quantum physics
- Solid-state electronics
- Metrology
Background:
- Electron pumps are crucial for generating quantized electric current.
- Achieving high accuracy in quantum current standards has been a long-standing challenge.
- Previous attempts faced difficulties in balancing speed and precision.
Purpose of the Study:
- To enhance the accuracy of semiconductor quantum dot electron pumps.
- To explore the potential of specially designed gate drive waveforms.
- To develop a device suitable for realizing the SI base unit ampere.
Main Methods:
- Utilized semiconductor quantum dot devices.
- Implemented novel, specially designed gate drive waveforms.
- Performed precise measurements of generated current and accuracy.
Main Results:
- Demonstrated a semiconductor quantum dot pump with significantly improved accuracy.
- Achieved a current generation of up to 150 pA (nearly a billion electrons/sec).
- Experimentally verified current accuracy better than 1.2 parts per million (p.p.m.), approaching 0.01 p.p.m.
Conclusions:
- Specially designed gate drive waveforms dramatically improve electron pump accuracy.
- The developed pump is a strong candidate for realizing the SI ampere.
- This work advances the development of quantum current standards and metrology.
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