Related Experiment Video
Updated: May 20, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Tunable conductivity threshold at polar oxide interfaces
M L Reinle-Schmitt1, C Cancellieri, D Li
1Paul Scherrer Institut, CH-5232 Villigen, Switzerland.
Abstract:
The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO(3) and LaAlO(3) have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO(3) and LaAlO(3), and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO(3) layer is diluted with SrTiO(3), and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO(3) in this solid solution, and thereby also with the layer's formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.
Related Concept Videos
Debye–Huckel–Onsager Conductance Equation
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Dielectric Polarization in a Capacitor
The Electrical Double Layer
Design Example: Resistive Touchscreen
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
Ostwald’s Dilution Law

