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Probing the nature of defects in graphene by Raman spectroscopy
Axel Eckmann1, Alexandre Felten, Artem Mishchenko
1School of Chemistry and Photon Science Institute, University of Manchester, United Kingdom.
Abstract:
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (∼13) for sp(3)-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
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