Related Experiment Video
Updated: May 20, 2026
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a
Che-Hao Liao1, Wen-Ming Chang, Horng-Shyang Chen
1Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, 10617 Taiwan.
Abstract:
With the nano-imprint lithography and the pulsed growth mode of metalorganic chemical vapor deposition, a regularly-patterned, c-axis nitride nanorod (NR) array of quite uniform geometry with simultaneous depositions of top-face, c-plane disc-like and sidewall, m-plane core-shell InGaN/GaN quantum well (QW) structures is formed. The differences of geometry and composition between these two groups of QW are studied with scanning electron microscopy, cathodoluminescence, and transmission electron microscopy (TEM). In particular, the strain state analysis results in TEM observations provide us with the information about the QW width and composition. It is found that the QW widths are narrower and the indium contents are higher in the sidewall m-plane QWs, when compared with the top-face c-plane QWs. Also, in the sidewall m-plane QWs, the QW width (indium content) decreases (increases) with the height on the sidewall. The observed results can be interpreted with the migration behaviors of the constituent atoms along the NR sidewall from the bottom.
