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Updated: May 20, 2026
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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode
1Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland. li.wang@psi.ch
Nanotechnology
|July 12, 2012
Summary
Scanning exposure overcomes limited beam size in interference lithography. This enables uniform, large-area fabrication of 35 nm pitch nanostructures using extreme ultraviolet (EUV) interference lithography.
Area of Science:
- Nanotechnology
- Materials Science
- Optics
Background:
- Interference lithography is a key nanofabrication technique.
- Limited beam spot size restricts patterning area and homogeneity.
Purpose of the Study:
- To address the limitations of beam spot size in interference lithography.
- To develop a scanning exposure technique for improved nanostructure fabrication.
Main Methods:
- Utilized a scanning exposure technique with extreme ultraviolet (EUV) interference lithography.
- Fabricated one- and two-dimensional periodic nanostructures.
Main Results:
- Achieved uniform and seamless gratings with half-pitches down to 35 nm.
- Demonstrated patterning over an area of several mm(2).
- Improved pattern uniformity and increased patterning area.
Conclusions:
- The scanning exposure technique effectively circumvents beam spot size limitations.
- This method provides a fast, cost-effective approach for large-area nanostructure fabrication.
- Enhanced uniformity and patterning area were achieved for periodic nanostructures.
