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Published on: October 12, 2019
Z-BN: a novel superhard boron nitride phase
Chaoyu He1, Lizhong Sun, Chunxiao Zhang
1Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105, China.
A new superhard boron nitride phase, Z-BN, is proposed. This phase exhibits high structural stability and hardness comparable to cubic boron nitride (c-BN), suggesting potential for experimental synthesis.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) are well-known materials with distinct properties.
- The search for novel boron nitride phases with enhanced properties remains an active area of research.
- Understanding intermediate phases between h-BN and c-BN can lead to new material discoveries.
Purpose of the Study:
- To propose and investigate a new superhard boron nitride phase, Z-BN.
- To determine the structural stability, electronic properties, and mechanical hardness of Z-BN.
- To assess the feasibility of experimental synthesis of Z-BN.
Main Methods:
- First-principles calculations based on density functional theory (DFT).
- Energetic, structural, and electronic property analyses.
- Vickers hardness and transition pressure calculations.
Main Results:
- Z-BN is identified as a stable phase energetically favorable over bct-BN.
- Z-BN exhibits high structural stability and density comparable to c-BN.
- Z-BN is a transparent insulator with an indirect band gap of 5.27 eV and a Vickers hardness of 55.88 GPa.
- Low transition pressure (3.3 GPa) suggests experimental feasibility via cold compression of AB stacking h-BN.
Conclusions:
- Z-BN represents a promising new superhard boron nitride phase.
- Its properties are comparable to those of c-BN, making it a potential candidate for advanced applications.
- The proposed synthesis route offers a viable pathway for experimental realization.
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