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Related Experiment Video

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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Published on: February 12, 2017

Lithography for enabling advances in integrated circuits and devices.

C Michael Garner1

  • 1Garner Nanotechnology Solutions, Stanford University, Stanford, CA, USA. mike.c.garner@att.net

Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|July 18, 2012
PubMed
Summary

Lithography advancements have driven semiconductor device density increases since the 1960s. Future technologies like extreme ultraviolet lithography are crucial for continued miniaturization and novel computing.

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Last Updated: May 20, 2026

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Published on: February 12, 2017

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Area of Science:

  • Semiconductor manufacturing
  • Nanotechnology
  • Materials science

Background:

  • Lithography has historically enabled increased device density in integrated circuits.
  • Evolutionary optical lithography advanced field-effect transistor integration.
  • Industry roadmaps, like the International Technology Roadmap for Semiconductors, were established to coordinate development for nanometre scales.

Purpose of the Study:

  • To review the historical evolution of lithography and pattern transfer technologies.
  • To identify future technologies essential for continued semiconductor scaling.
  • To explore potential impacts on novel memory and logic technologies.

Main Methods:

  • Historical analysis of lithography techniques from contact printers to advanced wavelengths (i-line, 248 nm, 193 nm).
  • Examination of pattern transfer evolution from wet etching to plasma etching.
  • Identification of emerging technologies such as extreme ultraviolet lithography, imprint technology, and directed self-assembly.

Main Results:

  • Lithography complexity has increased significantly, requiring parallel advancements in mask-making, printing, alignment, and photoresist.
  • Current high-volume production fabricates features at 32 nm.
  • New pattern transfer technologies are necessary for further increases in device and interconnect density.

Conclusions:

  • Continued scaling of complementary metal oxide semiconductors is expected.
  • Advanced pattern transfer technologies may enable new memory and logic based on novel physical phenomena.
  • These advancements are key to enhancing and extending information processing capabilities.