Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 20, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

S Hertel1, D Waldmann, J Jobst

  • 1Friedrich-Alexander University Erlangen-Nuremberg, Staudtstr. 7, 91058 Erlangen, Germany.

Nature Communications
|July 19, 2012
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gemcitabine and low dose carboplatin in the treatment of elderly patients with advanced non-small cell lung cancer.

Lung cancer (Amsterdam, Netherlands)·2003
Same author

Structure of bacteriocin AS-48: from soluble state to membrane bound state.

Journal of molecular biology·2003
Same author

Crural artery bypass with the autogenous greater saphenous vein.

European journal of vascular and endovascular surgery : the official journal of the European Society for Vascular Surgery·2003
Same author

[Predictive value of prenatal MRI in the diagnosis of thoracic congenital malformations].

Cirugia pediatrica : organo oficial de la Sociedad Espanola de Cirugia Pediatrica·2003
Same author

Weekly paclitaxel for advanced non-small cell lung cancer patients not suitable for platinum-based therapy.

Neoplasma·2003
Same author

Factors predictive of nephropathy in DCCT Type 1 diabetic patients with good or poor metabolic control.

Diabetic medicine : a journal of the British Diabetic Association·2003

Researchers developed a novel monolithic transistor using epitaxial graphene on silicon carbide. This breakthrough enables high on/off ratios for post-silicon electronics, paving the way for wafer-scale graphene devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene shows promise for post-silicon electronics due to its exceptional electronic properties.
  • The lack of an electronic bandgap in graphene hinders the development of high on/off ratio switching devices.
  • Wafer-scale integration of graphene-based electronics requires novel device concepts.

Purpose of the Study:

  • To present a monolithic transistor concept for wafer-scale graphene electronics.
  • To utilize the epitaxial graphene on silicon carbide material system for electronic devices.
  • To achieve high on/off ratios and explore fabrication simplicity.

Main Methods:

  • Fabrication of a monolithic transistor using the epitaxial graphene on silicon carbide (0001) system.

More Related Videos

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Related Experiment Videos

Last Updated: May 20, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

  • Tailoring graphene/semiconductor interfaces for both ohmic and Schottky contacts on the same chip.
  • Characterization of transistor performance, including on/off ratios and high-frequency response.

    • Main Results:

    • Demonstration of normally on and normally off transistor operation.
    • Achieved on/off ratios exceeding 10^4 with no damping at megahertz frequencies.
    • Simplified fabrication process requiring only one lithography step for various components.

    Conclusions:

    • The monolithic transistor utilizing epitaxial graphene on silicon carbide offers a viable path for high-performance graphene electronics.
    • The ability to create both ohmic and Schottky contacts on-chip simplifies integrated circuit fabrication.
    • This approach facilitates the development of wafer-scale graphene electronics without metallic interconnects.