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Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

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Polarization resolved reflection from ordered vertical silicon nanowire arrays.

M Khorasaninejad¹, N Abedzadeh, J Sun

¹Department of Electrical and Computer Engineering, University of Waterloo, 200, University Avenue West, Waterloo, Ontario, Canada.

|July 25, 2012

Summary

We measured light reflections from silicon nanowire arrays, comparing experimental data to simulations. This analysis helps estimate nanowire dimensions and reveals light depolarization below 400 nm.

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Area of Science:

Nanotechnology
Optics
Materials Science

Background:

Ordered vertical silicon nanowire arrays are crucial for various optical applications.
Accurate characterization of nanowire dimensions is essential for device performance.

Purpose of the Study:

To measure and analyze polarization-resolved reflections from silicon nanowire arrays.
To compare experimental data with rigorous coupled wave analysis (RCWA) simulations.
To estimate nanowire diameter and length using ellipsometric analysis.

Main Methods:

Measurement of polarization-resolved reflections from silicon nanowire arrays.
Rigorous coupled wave analysis (RCWA) simulations for theoretical comparison.
Ellipsometric analysis utilizing anisotropic effective-medium approximation (AEMMA).

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Main Results:

Experimental reflection data were successfully fitted using AEMMA.
Accurate estimation of nanowire diameter and length was achieved.
Observation of light depolarization for wavelengths below 400 nm.

Conclusions:

The study validates the use of RCWA and ellipsometry for characterizing silicon nanowires.
The findings provide insights into the optical properties of nanowire arrays.
Depolarization effects at shorter wavelengths warrant further investigation for optical device design.