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Related Experiment Video

Updated: May 20, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001).

M Wiesner1, W-M Schulz, C Kessler

  • 1Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, D-70569 Stuttgart, Germany. m.wiesner@ihfg.uni-stuttgart.de

Nanotechnology
|July 31, 2012
PubMed
Summary
This summary is machine-generated.

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Researchers developed defect-free indium phosphide quantum dots on silicon for photonics. These quantum dots enable efficient, electrically driven single-photon emission in the red spectrum.

Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Photonics

Background:

  • Heteroepitaxy of III-V semiconductors on silicon is key for silicon photonics.
  • Material property mismatches cause defects, hindering radiative recombination.

Purpose of the Study:

  • To realize defect-free indium phosphide quantum dots on silicon.
  • To achieve electrically driven single-photon emission for photonic applications.

Main Methods:

  • Metal-organic vapour-phase epitaxy (MOVPE) for growing indium phosphide quantum dots.
  • Utilizing exactly oriented Si(001) substrates.

Main Results:

  • First realization of defect-free indium phosphide quantum dots on Si(001).

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Compact Quantum Dots for Single-molecule Imaging
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Compact Quantum Dots for Single-molecule Imaging

Published on: October 9, 2012

Related Experiment Videos

Last Updated: May 20, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Compact Quantum Dots for Single-molecule Imaging
17:14

Compact Quantum Dots for Single-molecule Imaging

Published on: October 9, 2012

  • Demonstrated electrically driven single-photon emission in the red spectral region.

    • Conclusions:

    • Indium phosphide quantum dots overcome defect challenges in III-V on silicon heteroepitaxy.
    • The emission wavelength matches silicon avalanche photodiodes' peak efficiency, enabling integrated photonic devices.