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Published on: April 25, 2018
Effective control of photoluminescence from ZnO nanowires by a-SiNx:H decoration
Rui Huang1, Shuigang Xu, Xiang Wang
1Department of Physics and the William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
Abstract:
The a-SiNx:H with a large bandgap of 3.8 eV was utilized to decorate ZnO nanowires. The UV emission from the a-SiNx:H-decorated ZnO nanowires are greatly enhanced compared with the undecorated ZnO nanowire. The deep-level defect emission has been completely suppressed even though the sample was annealed at temperatures up to 400 °C. The incorporation of H and N is suggested to passivate the defect states at the nanowire surface and thus result in the flat-band effect near ZnO surface as well as reduction of the nonradiative recombination probability.
