Related Experiment Video
Updated: May 19, 2026
10:54
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
Gallium-nitride-based plasmonic multilayer operating at 1.55 μm
Arnaud Stolz1, Laurence Considine, Salim Faci
1Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d’Ascq Cedex, France.
Optics Letters
|August 4, 2012
Summary
Researchers developed a novel III-V semiconductor multilayer for telecom wavelengths, utilizing surface plasmon resonance (SPR). Experimental results confirmed SPR, paving the way for plasmonic-semiconductor optical devices.
Area of Science:
- Optoelectronics
- Materials Science
- Nanophotonics
Background:
- Surface Plasmon Resonance (SPR) is a phenomenon enabling light manipulation at the nanoscale.
- III-V semiconductors offer unique optoelectronic properties for advanced devices.
- Telecom wavelengths present specific challenges and opportunities for photonic integration.
Purpose of the Study:
- To design and fabricate a novel III-V semiconductor multilayer structure.
- To achieve Surface Plasmon Resonance (SPR) operation at telecom wavelengths.
- To explore the potential for plasmonic-semiconductor optical devices.
Main Methods:
- Theoretical optimization of optogeometrical and material parameters using Maxwell's equations.
- Fabrication of the III-V semiconductor multilayer device.
- Experimental characterization employing an evanescent coupling configuration.
Main Results:
- Successful design and fabrication of a III-V semiconductor multilayer.
- Experimental confirmation of Surface Plasmon Resonance (SPR).
- Observation of a sharp spectral response width associated with SPR.
Conclusions:
- The study demonstrates a viable approach for SPR in III-V semiconductor multilayers at telecom wavelengths.
- This work represents a foundational step towards developing new plasmonic-semiconductor optical modulators and switches.
- The findings highlight the potential of integrating plasmonics with semiconductors for advanced optical functionalities.
