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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Gallium-nitride-based plasmonic multilayer operating at 1.55 μm.

Arnaud Stolz1, Laurence Considine, Salim Faci

  • 1Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d’Ascq Cedex, France.

Optics Letters
|August 4, 2012
PubMed
Summary

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Researchers developed a novel III-V semiconductor multilayer for telecom wavelengths, utilizing surface plasmon resonance (SPR). Experimental results confirmed SPR, paving the way for plasmonic-semiconductor optical devices.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanophotonics

Background:

  • Surface Plasmon Resonance (SPR) is a phenomenon enabling light manipulation at the nanoscale.
  • III-V semiconductors offer unique optoelectronic properties for advanced devices.
  • Telecom wavelengths present specific challenges and opportunities for photonic integration.

Purpose of the Study:

  • To design and fabricate a novel III-V semiconductor multilayer structure.
  • To achieve Surface Plasmon Resonance (SPR) operation at telecom wavelengths.
  • To explore the potential for plasmonic-semiconductor optical devices.

Main Methods:

  • Theoretical optimization of optogeometrical and material parameters using Maxwell's equations.
  • Fabrication of the III-V semiconductor multilayer device.

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Last Updated: May 19, 2026

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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  • Experimental characterization employing an evanescent coupling configuration.

    • Main Results:

    • Successful design and fabrication of a III-V semiconductor multilayer.
    • Experimental confirmation of Surface Plasmon Resonance (SPR).
    • Observation of a sharp spectral response width associated with SPR.

    Conclusions:

    • The study demonstrates a viable approach for SPR in III-V semiconductor multilayers at telecom wavelengths.
    • This work represents a foundational step towards developing new plasmonic-semiconductor optical modulators and switches.
    • The findings highlight the potential of integrating plasmonics with semiconductors for advanced optical functionalities.