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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Investigating the Potential of Singly Curved Thin Piezoelectric Transducers for Energy Harvesting and Structural Health Monitoring
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Published on: November 14, 2025

Half-Heusler semiconductors as piezoelectrics.

Anindya Roy1, Joseph W Bennett, Karin M Rabe

  • 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.

Physical Review Letters
|August 7, 2012
PubMed
Summary

This study reveals semiconducting half-Heusler compounds as a new class of piezoelectric materials. Computational screening identifies promising candidates for advanced piezoelectric applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Piezoelectric materials are crucial for various technologies, including sensors and actuators.
  • Exploring novel material classes is essential for advancing piezoelectric device performance.
  • Semiconducting half-Heusler compounds have not been previously recognized for piezoelectric properties.

Purpose of the Study:

  • To investigate the potential of semiconducting half-Heusler compounds as piezoelectric materials.
  • To identify specific half-Heusler compounds with desirable piezoelectric characteristics.
  • To provide a computational basis for experimental validation and application.

Main Methods:

  • Utilizing a first-principles, rational-design approach.
  • Performing a high-throughput computational screening of numerous half-Heusler compounds.
  • Calculating structural, dielectric, and piezoelectric properties for candidate materials.

Main Results:

  • Demonstrated that semiconducting half-Heusler compounds can exhibit piezoelectricity.
  • Identified specific compounds within this class possessing favorable piezoelectric properties.
  • Established a correlation between electronic structure and piezoelectric response.

Conclusions:

  • Semiconducting half-Heusler compounds represent a promising, previously unrecognized class of piezoelectric materials.
  • The findings guide experimental efforts in synthesizing and characterizing these materials.
  • These materials hold potential for next-generation piezoelectric devices and applications.