Monte Carlo simulation of CD-SEM images for linewidth and critical dimension metrology

In semiconductor industry, strict critical dimension control by using a critical dimension scanning electron microscope (CD-SEM) is an extremely urgent task in near-term years. A Monte Carlo simulation model for study of CD-SEM image has been established, which is based on using Mott's cross section for electron elastic scattering and the full Penn dielectric function formalism for electron inelastic scattering and the associated secondary electron (SE) production. In this work, a systematic calculation of CD-SEM line-scan profiles and 2D images of trapezoidal Si lines has been performed by taking into account different experimental factors including electron beam condition (primary energy, probe size), line geometry (width, height, foot/corner rounding, sidewall angle, and roughness), material properties, and SE signal detection. The influences of these factors to the critical dimension metrology are investigated, leading to build a future comprehensive model-based library.