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Hopping conduction in Mn ion-implanted GaAs nanowires.

Waldomiro Paschoal1, Sandeep Kumar, Christian Borschel

  • 1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.

Nano Letters
|August 15, 2012
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Summary

Charge transport in heavily doped gallium arsenide (GaAs) nanowires is governed by hopping processes. A crossover between nearest neighbor hopping and Mott variable range hopping occurs around 180 K.

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Area of Science:

  • Semiconductor Nanowires
  • Condensed Matter Physics
  • Materials Science

Background:

  • Gallium arsenide (GaAs) nanowires are crucial for electronic devices.
  • Understanding charge transport mechanisms is key to optimizing nanowire performance.
  • Doping significantly alters the electronic properties of semiconductor nanowires.

Purpose of the Study:

  • To investigate temperature-dependent charge transport in heavily Mn(+)-implanted GaAs nanowires.
  • To identify the dominant charge transport mechanisms.
  • To analyze the influence of electric fields on conductivity at low temperatures.

Main Methods:

  • Fabrication of heavily Mn(+)-implanted GaAs nanowires.
  • Temperature-dependent electrical conductivity measurements.
  • Analysis of charge transport models including nearest neighbor hopping and Mott variable range hopping.

Main Results:

  • Charge transport is governed by temperature-dependent hopping processes.
  • A crossover from nearest neighbor hopping to Mott variable range hopping was observed at approximately 180 K.
  • Characteristic hopping energies and lengths were extracted.
  • Nonlinear conductivity at low temperatures indicates a modified hopping process under high electric fields.

Conclusions:

  • Hopping mechanisms dominate charge transport in these doped nanowires.
  • The observed crossover provides insights into the energy landscape for charge carriers.
  • High electric fields significantly modify hopping transport at low temperatures, suggesting potential for field-effect applications.