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Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

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Published on: December 3, 2013

X-ray pump optical probe cross-correlation study of GaAs.

S M Durbin¹, T Clevenger, T Graber

¹Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.

Nature Photonics

|August 18, 2012

Summary

X-ray pulses can make gallium arsenide (GaAs) transparent or opaque to light within 100 picoseconds. This discovery offers new methods for studying ultrafast semiconductor dynamics using X-ray free-electron lasers.

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Area of Science:

Condensed matter physics
Materials science
Ultrafast spectroscopy

Background:

Optical-pump, X-ray probe techniques are standard for studying ultrafast dynamics.
Advancements in synchrotron and X-ray free-electron laser (XFEL) capabilities open new research avenues.
The reverse approach, X-ray pump followed by optical probe, is less explored.

Purpose of the Study:

To investigate the ultrafast optical response of semiconductors to X-ray excitation.
To explore the feasibility of using X-ray-induced changes in optical properties for time-resolved measurements.
To develop novel cross-correlation techniques for X-ray sources.

Main Methods:

Utilizing an X-ray pump beam to excite a thin gallium arsenide (GaAs) sample.
Employing an optical probe beam to measure changes in the sample's transmission spectrum.
Investigating the effects at photon energies above and below the GaAs bandgap.

Main Results:

An X-ray pump induced a transformation of the GaAs sample from a strong absorber to a nearly transparent window for photon energies above the bandgap within 100 picoseconds.
The opposite effect, X-ray induced optical opacity, was observed for photon energies below the bandgap.
These findings highlight the complex ultrafast many-body response of semiconductors to X-ray absorption.

Conclusions:

The study demonstrates a novel X-ray pump-optical probe technique for studying ultrafast dynamics in semiconductors.
This method provides a new approach for X-ray/optical cross-correlation measurements at synchrotrons and XFELs.
The observed phenomena offer insights into the fundamental ultrafast response of materials to intense X-ray irradiation.