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Published on: December 3, 2013
X-ray pump optical probe cross-correlation study of GaAs
S M Durbin1, T Clevenger, T Graber
1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.
Nature Photonics
|August 18, 2012
Summary
X-ray pulses can make gallium arsenide (GaAs) transparent or opaque to light within 100 picoseconds. This discovery offers new methods for studying ultrafast semiconductor dynamics using X-ray free-electron lasers.
Area of Science:
- Condensed matter physics
- Materials science
- Ultrafast spectroscopy
Background:
- Optical-pump, X-ray probe techniques are standard for studying ultrafast dynamics.
- Advancements in synchrotron and X-ray free-electron laser (XFEL) capabilities open new research avenues.
- The reverse approach, X-ray pump followed by optical probe, is less explored.
Purpose of the Study:
- To investigate the ultrafast optical response of semiconductors to X-ray excitation.
- To explore the feasibility of using X-ray-induced changes in optical properties for time-resolved measurements.
- To develop novel cross-correlation techniques for X-ray sources.
Main Methods:
- Utilizing an X-ray pump beam to excite a thin gallium arsenide (GaAs) sample.
- Employing an optical probe beam to measure changes in the sample's transmission spectrum.
- Investigating the effects at photon energies above and below the GaAs bandgap.
Main Results:
- An X-ray pump induced a transformation of the GaAs sample from a strong absorber to a nearly transparent window for photon energies above the bandgap within 100 picoseconds.
- The opposite effect, X-ray induced optical opacity, was observed for photon energies below the bandgap.
- These findings highlight the complex ultrafast many-body response of semiconductors to X-ray absorption.
Conclusions:
- The study demonstrates a novel X-ray pump-optical probe technique for studying ultrafast dynamics in semiconductors.
- This method provides a new approach for X-ray/optical cross-correlation measurements at synchrotrons and XFELs.
- The observed phenomena offer insights into the fundamental ultrafast response of materials to intense X-ray irradiation.

