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Updated: May 19, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Site-controlled growth of InP/GaInP quantum dots on GaAs substrates
V Baumann1, F Stumpf, T Steinl
1Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Würzburg, Germany. Vasilij.Baumann@physik.uni-wuerzburg.de
Abstract:
A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 μm along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (λ ~ 670 nm) are investigated by means of ensemble- and micro-photoluminescence spectroscopy at cryogenic temperatures.
