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Updated: May 19, 2026
Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
Published on: September 23, 2018
A facile route to recover intrinsic graphene over large scale
Dong-Wook Shin1, Hyun Myoung Lee, Seong Man Yu
1SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440746, Republic of Korea.
Abstract:
The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
