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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Water as origin of hysteresis in zinc tin oxide thin-film transistors

M Fakhri1, H Johann, P Görrn

  • 1Institute of Electronic Devices, University Wuppertal, Rainer-Gruenter-Strasse 21, 42119 Wuppertal, Germany.

ACS Applied Materials & Interfaces
|September 4, 2012
PubMed

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