Related Experiment Video

Updated: May 19, 2026

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

High-contrast 40 Gb/s operation of a 500 μm long silicon carrier-depletion slow wave modulator

A Brimont1, D J Thomson, F Y Gardes

  • 1Nanophotonics Technology Center, Universitat Politècnica de Valencia, Valencia, Spain. abrimont@ntc.upv.es

Optics Letters
|September 4, 2012
PubMed

More Related Videos

Characterization of Anisotropic Leaky Mode Modulators for Holovideo09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...