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Published on: November 9, 2015
Light absorption engineering of hydrogenated nanocrystalline silicon by femtosecond laser
1Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai, China.
Abstract:
The light absorption coefficient of hydrogenated nanocrystalline silicon has been engineered to have a Gaussian distribution by means of absorption modification using a femtosecond laser. The absorption-modified sample exhibits a significant absorption enhancement of up to ∼700%, and the strong absorption does not depend on the incident light. We propose a model responsible for this interesting behavior. In addition, we present an optical limiter constructed through this absorption engineering method.
