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Valence Bond Theory02:42

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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...

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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
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Towards electrical spin injection into LaAlO3-SrTiO3.

M Bibes1, N Reyren, E Lesne

  • 1Unité Mixte de Physique CNRS-Thales, Palaiseau, France. manuel.bibes@thalesgroup.com

Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|September 19, 2012
PubMed
Summary

Researchers explored oxide-based spin field-effect transistors (FETs) for spintronics. They observed significant spin accumulation at the LaAlO(3)-SrTiO(3) interface, suggesting potential for giant responses in oxide spin transport structures.

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Area of Science:

  • Spintronics and oxide electronics
  • Condensed matter physics
  • Materials science

Background:

  • Oxide materials offer multi-functional properties for charge-based and spin-based devices.
  • Previous research lacked suitable channel materials for oxide-based lateral spin transport structures.
  • Giant responses have been observed in oxide-based two-terminal spin devices.

Purpose of the Study:

  • To investigate the potential of oxide-based spin field-effect transistors (FETs).
  • To explore electrical spin injection and transport in oxide systems.
  • To analyze magnetotransport data for spin accumulation signals.

Main Methods:

  • Utilized a three-terminal measurement scheme.
  • Analyzed voltage variations associated with spin accumulation precession.
  • Applied perpendicular and longitudinal magnetic fields (Hanle and inverted Hanle effects).

Main Results:

  • Magnetotransport data suggest successful electrical spin injection into the LaAlO(3)-SrTiO(3) interface.
  • Observed a spin accumulation signal significantly larger than anticipated.
  • Potential amplification effects attributed to resonant tunneling through localized states in LaAlO(3).

Conclusions:

  • The LaAlO(3)-SrTiO(3) interface shows promise for oxide-based spin FETs.
  • Amplification mechanisms could enhance spin signals in these systems.
  • Future work should focus on direct spin injection and efficient gating for spin manipulation.