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Related Experiment Video

Updated: May 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion.

Shengjun Qin¹, Jinyu Zhang, Di Fu

¹Institute of Microelectronics, Tsinghua University, Beijing 100084, China.

|September 20, 2012

Summary

This study models carbon-based resistive-switching random access memory using a percolation approach. The model accurately simulates the switching mechanism based on carbon phase transitions, validated by experimental data.

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Area of Science:

Materials Science
Electrical Engineering
Condensed Matter Physics

Background:

Carbon-based resistive-switching random access memory (RRAM) offers potential for next-generation electronics.
Understanding the switching mechanism is crucial for optimizing RRAM performance.

Purpose of the Study:

To develop a percolation-based model for the switching mechanism in carbon-based RRAM.
To investigate the role of sp(3) and sp(2) carbon phases in resistive switching.

Main Methods:

Modeling the switching mechanism using a percolation approach.
Utilizing a random circuit breaker network to represent the carbon cluster matrix.
Simulating thermal stress-induced sp(2) to sp(3) phase transitions and electric field-induced sp(3) to sp(2) phase transitions.

Main Results:

The proposed model accurately describes the resistive switching process in carbon-based RRAM.
Simulations showed good agreement with experimental data for the switching biasing scheme.
The model highlights the importance of phase transitions between sp(3) (diamond-like) and sp(2) (graphite-like) states.

Conclusions:

The percolation model provides a valid framework for understanding carbon-based RRAM switching.
The model's accuracy is confirmed through comparison with experimental results.
This work contributes to the advancement of carbon-based memory device technology.