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Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...
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Electrostatic Boundary Conditions in Dielectrics01:27

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Boundary Conditions for Current Density01:25

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Domain wall geometry controls conduction in ferroelectrics.

R K Vasudevan1, A N Morozovska, E A Eliseev

  • 1School of Materials Science and Engineering, University of New South Wales, Kensington 2052, Australia.

Nano Letters
|September 22, 2012
PubMed
Summary
This summary is machine-generated.

Domain walls in ferroics can be active nanoelectronic devices. Researchers modulated domain wall conductivity by 500% using domain wall curvature in bismuth ferrite, enabling new nanoscale electronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Domain walls in ferroic materials are emerging as active elements in nanoelectronics.
  • Tailoring physical properties within domain walls offers new device possibilities.

Purpose of the Study:

  • To demonstrate the modulation of domain wall conductivity via geometry.
  • To explore the underlying mechanisms of carrier migration and potential distributions.

Main Methods:

  • Ambient and ultrahigh-vacuum scanning probe microscopy (SPM) on bismuth ferrite.
  • Landau-Ginzburg-Devonshire calculations.
  • Phase-field modeling.

Main Results:

  • Domain wall conductivity in bismuth ferrite was modulated by up to 500% spatially.
  • Conduction is attributed to carrier/vacancy migration neutralizing interface charge.
  • Anisotropic potential distributions arise from polarization dynamics and elastic effects.

Conclusions:

  • This study provides the first proof of concept for modulating charge via domain wall geometry using a proximal probe.
  • These findings expand potential applications for oxide ferroics in nanoscale electronics.