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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Plasmon-induced doping of graphene
Zheyu Fang1, Yumin Wang, Zheng Liu
1Department of Electrical and Computer Engineering, Laboratory for Nanophotonics, Rice University, Houston, Texas 77005, United States. zf4@rice.edu
ACS Nano
|September 25, 2012
Summary
Metallic nanoantennas inject hot electrons into graphene, doping the material. This tunable effect, driven by plasmon decay, offers potential for novel optoelectronic devices.
Area of Science:
- Plasmonics
- Graphene electronics
- Nanotechnology
Background:
- Graphene exhibits unique electronic properties influenced by its carrier density.
- Controlling carrier density in graphene is crucial for device applications.
- Plasmonic nanoantennas can concentrate light and generate energetic electrons.
Purpose of the Study:
- To investigate the injection of nonequilibrium hot electrons from metallic nanoantennas into graphene.
- To demonstrate the doping effect and its tunability in graphene.
- To explore the potential of this hybrid material for optoelectronics.
Main Methods:
- Fabrication of plasmonic antenna-patterned graphene sheets.
- Resonant illumination of nanoantennas with lasers.
- Measurement of gate-controlled transport characteristics to determine carrier density and Dirac point shift.
Main Results:
- Observed a prominent change in graphene's carrier density upon laser excitation.
- Demonstrated that hot electron injection from nanoantennas effectively dopes graphene.
- Showcased the tunability of the doping effect by altering antenna resonance and laser power.
Conclusions:
- Hot electron doping of graphene via plasmonic nanoantennas is a viable mechanism.
- This creates a new hybrid material with tunable optoelectronic properties.
- The developed approach holds significant promise for advanced optoelectronic device applications.
