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Giant ambipolar Rashba effect in the semiconductor BiTeI.

A Crepaldi¹, L Moreschini, G Autès

¹Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

Physical Review Letters

|September 26, 2012

Summary

This study reveals a significant spin-orbit splitting in BiTeI, a noncentrosymmetric semiconductor. This property, along with tunable electronic behavior, makes BiTeI promising for spintronic applications.

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Area of Science:

Condensed Matter Physics
Materials Science
Semiconductor Physics

Background:

Noncentrosymmetric semiconductors offer unique spin-dependent electronic properties.
Spin-orbit splitting is crucial for spintronics, enabling control over electron spin.

Purpose of the Study:

To investigate the spin-orbit splitting in bulk and surface states of BiTeI.
To explore the tunability of electronic properties and spin polarization via surface termination.
To assess the potential of BiTeI for semiconductor-based spin electronics.

Main Methods:

Experimental observation of spin-orbit splitting in BiTeI.
Surface termination control to manipulate Fermi level position.
Analysis of spin-polarized band intersections in surface depletion and accumulation layers.

Main Results:

A giant spin-orbit splitting was observed in both bulk and surface states of BiTeI.
Fermi level positioning in valence or conduction bands was achieved by controlling surface termination.
Spin-polarized bands were intersected in surface depletion and accumulation layers.
Momentum splitting remained unaffected by adsorbate-induced surface potential changes.

Conclusions:

BiTeI exhibits a large and robust spin splitting, a key requirement for spintronics.
The material demonstrates ambipolar conduction, further enhancing its suitability for spin electronics.
BiTeI presents a promising platform for developing next-generation semiconductor spintronic devices.