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Related Experiment Video

Updated: May 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Electrical control of interdot electron tunneling in a double InGaAs quantum-dot nanostructure.

K Müller¹, A Bechtold, C Ruppert

¹Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Physical Review Letters

|September 26, 2012

Summary

We observed ultrafast electron tunneling between quantum dots using pump-probe spectroscopy. This tunneling, crucial for quantum computing, occurs via elastic and inelastic processes over a wide bandwidth.

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Area of Science:

Quantum physics
Condensed matter physics
Spectroscopy

Background:

Electron tunneling is a fundamental quantum mechanical phenomenon.
Quantum dots are semiconductor nanocrystals with tunable electronic properties.
Understanding interdot electron transfer is key for developing quantum technologies.

Purpose of the Study:

To directly monitor electron tunneling between spatially separated quantum dots.
To investigate the role of Coulomb interactions and resonant tunneling processes.
To measure electron and hole tunneling times separately.

Main Methods:

Ultrafast pump-probe spectroscopy was employed.
The relative energy of orbital states in quantum dots was tuned.
Temporal evolution of pump-probe spectra was monitored.

Main Results:

Coulomb interactions influenced the photogenerated charge carriers.
Resonant tunneling was mediated by both elastic and inelastic processes.
Ultrafast interdot tunneling (<5 ps) occurred over a wide bandwidth (∼8 meV).

Conclusions:

Electron tunneling between quantum dots is directly observed and characterized.
The study reveals the mechanisms and timescales of interdot electron transfer.
Exciton-acoustic phonon coupling significantly influences the tunneling bandwidth.