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Elliot-Yafet mechanism in graphene
H Ochoa1, A H Castro Neto, F Guinea
1Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain.
Physical Review Letters
|September 26, 2012
Summary
Spin relaxation in graphene differs significantly from other materials due to a carrier density-dependent Elliot-Yafet mechanism. This unique property helps identify the sources of spin relaxation, distinguishing between impurities and defects.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Spin relaxation is crucial for spintronics applications.
- Graphene exhibits unique electronic properties.
- Understanding spin relaxation mechanisms in graphene is essential.
Purpose of the Study:
- To investigate the differences in spin relaxation between graphene and other materials.
- To analyze the role of the Elliot-Yafet mechanism in graphene.
- To identify methods for distinguishing spin relaxation origins in graphene.
Main Methods:
- Theoretical analysis of spin relaxation processes.
- Examination of the Elliot-Yafet mechanism in graphene.
- Investigation of carrier density dependence on spin relaxation times.
Main Results:
- The Elliot-Yafet mechanism in graphene shows a carrier density dependence.
- This dependence is independent of the scattering mechanism and mobility-carrier concentration relation.
- Spin relaxation in graphene is distinct from other materials.
Conclusions:
- The carrier density dependence of spin relaxation in graphene imposes constraints on its origin.
- This feature allows differentiation between ordinary impurities and defects affecting spin-orbit interaction.
- Insights into spin relaxation in graphene can guide material design for spintronic devices.
