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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
K Jiménez-García1, L J LeBlanc, R A Williams
1Joint Quantum Institute, National Institute of Standards and Technology and University of Maryland, Gaithersburg, Maryland 20899, USA.
Researchers created a novel one-dimensional lattice using artificial gauge fields and ultracold atoms. This system allows precise control over tunneling parameters, paving the way for quantum simulations of complex electronic systems.
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