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Locally critical resistivities from umklapp scattering
Sean A Hartnoll1, Diego M Hofman
1Department of Physics, Stanford University, Stanford, California 94305-4060, USA.
Physical Review Letters
|September 26, 2012
Summary
Local criticality offers a new path to efficient electron scattering, impacting material resistivity. This mechanism predicts a unique temperature dependence for resistivity in certain materials, distinct from standard models.
Area of Science:
- Condensed Matter Physics
- Quantum Critical Phenomena
- Materials Science
Background:
- Efficient momentum relaxation via umklapp scattering is crucial for understanding DC resistivity's temperature dependence.
- A significant low-energy spectral weight at finite momentum, often from Fermi surface structure, typically leads to relaxation rates proportional to T^2.
Purpose of the Study:
- To investigate if local criticality, where energies scale but momenta do not, offers an alternative mechanism for efficient umklapp scattering.
- To determine the resulting temperature dependence of resistivity in locally critical theories.
Main Methods:
- Theoretical analysis of umklapp scattering by an ionic lattice within a locally critical theory.
- Holographic computation using Einstein-Maxwell theory in Anti-de Sitter spacetime to model locally critical theories.
- Analysis of scattering by random impurities in these theories.
Main Results:
- Umklapp scattering in locally critical theories leads to a relaxation rate Γ∼T^(2Δ(k(L))), where Δ(k(L)) is the dimension of a charge density operator at lattice momentum k(L).
- Scattering by random impurities in these theories results in a universal relaxation rate Γ∼(log(1/T))^(-1).
Conclusions:
- Local criticality provides a distinct route to efficient umklapp scattering, modifying the expected temperature dependence of resistivity.
- The findings offer new insights into electron scattering mechanisms and their impact on material properties, particularly in systems exhibiting local criticality.
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