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Mechanisms of enhanced orbital dia- and paramagnetism: application to the Rashba semiconductor BiTeI

G A H Schober1, H Murakawa, M S Bahramy

  • 1Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan. g.schober@thphys.uni-heidelberg.de

Physical Review Letters
|September 26, 2012
PubMed

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