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Updated: May 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Metastable crystalline AuGe catalysts formed during isothermal germanium nanowire growth
A D Gamalski1, J Tersoff, R Sharma
1Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom. adg40@cam.ac.uk
Abstract:
We observe the formation of metastable AuGe phases without quenching, during strictly isothermal nucleation and growth of Ge nanowires, using video-rate lattice-resolved environmental transmission electron microscopy. We explain the unexpected formation of these phases through a novel pathway involving changes in composition rather than temperature. The metastable catalyst has important implications for nanowire growth, and more broadly, the isothermal process provides both a new approach to growing and studying metastable phases, and a new perspective on their formation.
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