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Unidirectional thermal effects in current-induced domain wall motion.
J Torrejon1, G Malinowski, M Pelloux
1Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502, 91405 Orsay, France. torrejon@lps.u-psud.fr
Physical Review Letters
|September 26, 2012
Summary
We observed magnetic domain walls moving towards hotter areas in NiFe nanostrips due to thermal effects. This thermal influence, likely the magnonic spin Seebeck effect, adds to current-induced motion.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Magnetic domain walls (DWs) are crucial for magnetic storage technologies.
- Understanding factors influencing DW motion is key for device optimization.
- Current-induced DW motion is a well-established phenomenon.
Purpose of the Study:
- To experimentally investigate thermal effects on magnetic domain wall displacement in nickel-iron (NiFe) nanostrips.
- To differentiate thermal contributions from current-induced motion.
- To identify the underlying physical mechanism responsible for thermally driven DW motion.
Main Methods:
- Utilizing nanosecond current pulses to induce domain wall motion in NiFe nanostrips.
- Precisely controlling and measuring heat dissipation within the nanostrips.
- Employing heat diffusion modeling to analyze temperature profiles.
- Quantitatively analyzing experimental data to determine forces acting on domain walls.
Main Results:
- Observed unidirectional motion of magnetic domain walls towards hotter regions of the nanostrips.
- Demonstrated that this motion is dependent on the temperature profile along the nanostrip.
- Showed that thermal effects contribute to DW displacement beyond classical thermodynamic pressure.
Conclusions:
- Thermal gradients significantly influence magnetic domain wall dynamics in NiFe nanostrips.
- The observed unidirectional motion is attributed to a temperature profile, likely driven by the magnonic spin Seebeck effect.
- This finding introduces a new mechanism for controlling magnetic domain walls, relevant for future spintronic devices.
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