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Phase diagram for nanostructuring CaF(2) surfaces by slow highly charged ions
A S El-Said1, R A Wilhelm, R Heller
1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany, EU. a.s.el-said@hzdr.de
Physical Review Letters
|September 26, 2012
Summary
Highly charged ions (HCI) create hidden defects on crystal surfaces, forming visible etch pits after etching. A threshold energy determines pit formation, leading to a phase diagram for HCI-induced surface restructuring.
Area of Science:
- Materials Science
- Surface Science
- Ion-Solid Interactions
Background:
- Highly charged ions (HCI) induce nano-scale surface modifications on ionic crystals.
- Observed topographic alterations include pits and nanohillocks, dependent on material and impact energy.
Purpose of the Study:
- To investigate the formation of thermodynamically stable defect agglomerations after HCI irradiation.
- To establish a phase diagram for HCI-induced surface restructuring by identifying a threshold for etch-pit formation.
Main Methods:
- Experimental irradiation of alkaline earth halide and alkali halide surfaces with slow HCI.
- Subsequent etching to reveal initially hidden defect agglomerations.
- Simulation of energy deposition by HCI to understand early dynamics.
Main Results:
- Evidence for thermodynamically stable defect agglomerations, visible as etch pits after etching.
- Identification of a distinct threshold for etch-pit formation based on projectile energy.
- Development of a phase diagram encompassing both etch pits and nanohillocks.
Conclusions:
- HCI irradiation creates complex surface modifications, including etchable defects.
- The formation of these defects is governed by a critical energy threshold.
- A comprehensive phase diagram illustrates HCI-induced surface restructuring.
